PART |
Description |
Maker |
AOTF42S60 |
600V 39A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
IRGPC50F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A)
|
IRF[International Rectifier]
|
IRGPC50FD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)
|
IRF International Rectifier
|
APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6011B2VR APT6011LVR |
POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6017JFLL |
POWER MOS 7 600V 31A 0.170 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
AOD7S60 |
600V 7A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AOWF7S60 AOW7S60 |
600V 7A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
AOT4S60 |
600V 4A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|